TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...
Japan's Fuji Electric has launched a new high-power module in its next-core series based on its latest insulated-gate bipolar transistor (IGBT) platform with diodes that feature a free-wheeling diode ...
This paper presents a novel 3-phase IGBT module called the SPM (Smart Power Module). This is a new design developed to provide a very compact, low cost, high perfor- mance and reliable motor drive ...
Microchip Technology Inc. has announced a portfolio of IGBT 7 devices housed in different packages, offering multiple topologies and current and voltage ranges. Featuring increased power capability, ...
The IGBT-7 series of 1.2-kV IGBT power modules relies on injection enhanced gate transistor (IEGT) process technology to yield lower saturation voltage, a wide safe operating area, higher operating ...
NTC temperature readout improves accuracy, increasing reliability and module utilization by up to 30 percent SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (NASDAQ: POWI), the leader in gate ...
In recent years, power semiconductor applications have expanded from industrial and consumer electronics to renewable energy and electric vehicles. Looking to the future, the most promising power ...
TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...
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