The drift-diffusion equations relevant for application to current flow in the double gate transistor are addressed. In standard operation this device has both source and drain heavily doped with the ...

Part 1 of this series focuses on high-performance electronic loads for testing power supplies that have low output voltage and high current. It describes the necessity for special electronic loads, ...

Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...

Able to withstand large voltages with fast switching speeds allows wide bandgap materials such as SiC and GaN to promise the required performance for emerging high power applications. Crucial to ...

The voltage-to-current converter in Figure 1 can both source and sink current. The circuit is more flexible than some traditional current references that require different topologies for current ...