The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

Field-effect transistors (FETs) are the cornerstone of modern electronic devices, providing the essential functionality for digital logic, analog processing and power management. The fundamental ...

Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne ...

Scientists from a Lisbon, Portugal, research group at the Center of Materials Research made the first FET with a common sheet of paper for an interstrate layer. The research team, led by Associate ...

Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances such ...

Metal-oxide-semiconductor field-effect transistors (MOSFETs) have revolutionized the world of electronics due to their remarkable performance and widespread applications. The MOSFET transistor is a ...

At the December 2021 IEDM conference (a conference for people who design advanced semiconductors), IBM announced it was turning transistors on their heads to keep Moore’s Law scaling alive. The new ...

WASHINGTON, December 21, 2021 -- Demand for sensitive and selective electronic biosensors -- analytical devices that monitor a target of interest in real time -- is growing for a wide range of ...

Advanced Micro Devices has created new high-performance transistors in its labs based on the simple concept that sometimes two are better than one. The chipmaker said Tuesday it has manufactured in ...