The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...

I R (International Rectifier), the first to build GaN (gallium-nitride) devices on silicon, has now introduced GaNpowIR, its first product on a GaN platform. GaN-device structures are not new; using a ...

Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer ...

Key market opportunities in the Gallium Nitride (GaN) transistor sector include enhancing power efficiency and density, strategic innovation in design and packaging, and leveraging resilient supply ...

Have you used gallium-nitride (GaN) transistors in your designs yet? If not, now may be the time to give it some consideration. GaN devices have been around for several years now, but improved ...

OTTAWA, Feb. 28, 2018 (GLOBE NEWSWIRE) -- GaN Systems, the global leader in GaN power semiconductors, today made public the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry’s most ...

OSAKA, Japan--(BUSINESS WIRE)--Panasonic Corporation today announced that it will launch the industry's smallest enhancement-mode[1] gallium nitride (GaN)[2] power transistors (X-GaN TM)** package.

The FINANCIAL — Panasonic Corporation on February 23 announced that it has developed an insulated-gate (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no ...

It’s not news that the efficiency of switching power supplies is now above 90% in many applications. At those levels, it becomes progressively harder to eke out small improvements. The introduction of ...

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum R DS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level ...

While 5G applications are proliferating everywhere, the industry continues to face a myriad of challenges implementing the technology. One of them has been the performance limitations of ...

A research team has fabricated a gallium nitride (GaN) transistor using diamond, which of all natural materials has the highest thermal conductivity on earth, as a substrate, and they succeeded in ...