(Nanowerk News) Powerful electronic components are indispensable for future communications, for the digital transformation of society and for artificial intelligence applications. On a footprint as ...
On Oct. 3, 1950, three scientists at Bell Labs in New Jersey received a U.S. patent for what would become one of the most important inventions of the 20th century — the transistor. John Bardeen, ...
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Late last year, [matseng] set up an interesting challenge for himself: design a new PCB every week, send it off to a fab house, and build a new project. It’s a grueling endeavor, but some of these ...
ALD is highly desirable for the fabrication and application of oxide semiconductor-based TFTs. We suggest that there are four key values of ALD in this area, which are illustrated in the figure: (1) ...
Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the rules. They've created a cutting-edge transistor using gallium-doped indium ...
Engineers have now achieved a breakthrough with transistors based on gallium oxide (beta-Ga2O3). The newly developed beta-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect transistor) provide a ...