The Generation 8 (Gen8) 1200V IGBT platform utilizes IR's latest generation trench gate field stop technology to offer best-in-class performance for industrial and energy saving applications.

The IGBT platform incorporates the world's thinnest IGBT devices fabricated on large diameter 200mm wafers, combined with cutting-edge deep trench technology to raise the bar for IGBT performance.

New DOWSIL™ EG-4175 Silicone Gel is designed for next-generation insulated gate bipolar transistor (IGBT) modules operating at higher voltages.

On November 12, Microchip Technology Incorporated (NASDAQ: MCHP) announced its portfolio of IGBT 7 devices, power components that offer increased power capabilities, lower power losses, and ...

China-based power semiconductor provider Byinka has announced the shipment of its 7th-generation Insulated Gate Bipolar Transistor (IGBT) to leading companies across industries such as electric ...

The 1200 V IGTO (t) is a direct drop-in upgrade for conventional IGBTs, using the same drivers and controllers and switching mechanism as a 1200 V IGBT.