The new silicone gel withstands temperatures up to 180C and expands the company's growing portfolio of solutions for power electronics. The material also absorbs vibrations and has self-healing ...

The Generation 8 (Gen8) 1200V IGBT platform utilizes IR's latest generation trench gate field stop technology to offer best-in-class performance for industrial and energy saving applications.

The IGBT platform incorporates the world's thinnest IGBT devices fabricated on large diameter 200mm wafers, combined with cutting-edge deep trench technology to raise the bar for IGBT performance.

On November 12, Microchip Technology Incorporated (NASDAQ: MCHP) announced its portfolio of IGBT 7 devices, power components that offer increased power capabilities, lower power losses, and ...

Dow launched DOWSIL EG-4175 silicone gel, a reliable protective solution for next-generation IGBT modules that operate at ...

New DOWSIL™ EG-4175 Silicone Gel is designed for next-generation insulated gate bipolar transistor (IGBT) modules operating at higher voltages.

Dow is aiming at IGBT modules with its latest silicone gel, to support operation up to 180°C in 800V vehicles and renewable energy.

Fuji Electric Announces New Line-Up of IPM Modules Based on Our 7th-Generation X-Series IGBT Technology ...

Actron Technology founder Ming-Kuang Lu was reported to quit chairmanship at the automotive diode maker, arousing curiosity among readers about what drove his intention. Soon after new directors ...

China-based power semiconductor provider Byinka has announced the shipment of its 7th-generation Insulated Gate Bipolar Transistor (IGBT) to leading companies across industries such as electric ...

The 1200 V IGTO (t) is a direct drop-in upgrade for conventional IGBTs, using the same drivers and controllers and switching mechanism as a 1200 V IGBT.