Baird 55th Annual Global Industrial Conference November 13, 2025 9:30 AM ESTCompany ParticipantsAnthony Guzzi - Chairman, ...
Abstract: The suboptimal performance and low channel-carrier mobility of silicon carbide (SiC) power MOSFETs are attributed to a high density of oxide traps near the 4H-SiC/SiO2 interface. In this ...
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