MB85RSXX is a FeRAM (Ferroelectric Random Access Memory) chip, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RSXX adopts the ...
Abstract: We demonstrate the high scalability of equivalent oxide thickness (EOT) scaled HfO2-ZrO2-HfO2 (HZH) gate stacks based on FinFETs with a physical gate length (Lg) of 25 nm. Benefiting from ...
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