TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...
Japan's Fuji Electric has launched a new high-power module in its next-core series based on its latest insulated-gate bipolar transistor (IGBT) platform with diodes that feature a free-wheeling diode ...
After successfully launching the 7th generation Micro-Pattern Trench (MPT) technology-based discrete IGBT new products in Q2 2024, PARA LIGHT ELECTRONICS CO., LTD. (Referred to as"Para Light" ...
This paper presents a novel 3-phase IGBT module called the SPM (Smart Power Module). This is a new design developed to provide a very compact, low cost, high perfor- mance and reliable motor drive ...
Microchip Technology Inc. has announced a portfolio of IGBT 7 devices housed in different packages, offering multiple topologies and current and voltage ranges. Featuring increased power capability, ...
The IGBT-7 series of 1.2-kV IGBT power modules relies on injection enhanced gate transistor (IEGT) process technology to yield lower saturation voltage, a wide safe operating area, higher operating ...
NTC temperature readout improves accuracy, increasing reliability and module utilization by up to 30 percent SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (NASDAQ: POWI), the leader in gate ...
Developing a power module requires enhanced design and verification methods. Currently, multiple iterations are needed to get the design done. Today, design and manufacturing processes are heavily ...
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