GitHub

LibDriver MB85RSXX

MB85RSXX is a FeRAM (Ferroelectric Random Access Memory) chip, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RSXX adopts the ...
IEEE

Demonstration Highly Scalability of Ultra-Thin EOT HfO2-ZrO2-HfO2 Gate Stacks With 25 nm Lg FinFET for Advanced CMOS Technology

Abstract: We demonstrate the high scalability of equivalent oxide thickness (EOT) scaled HfO2-ZrO2-HfO2 (HZH) gate stacks based on FinFETs with a physical gate length (Lg) of 25 nm. Benefiting from ...
IEEE

A One-Transistor DRAM Memory Cell Using HfO

Abstract: For the first time, we present a one-transistor dynamic random access memory (DRAM) cell using the ferroelectric polarization-assisted charge trapping phenomenon. The gate structure is ...
Semiconductor Engineering

Exploiting Domain Wall Conduction in Nitride Ferroelectrics As A New Type of Memristive FeRAM (Kiel Univ., Fraunhofer, NaMLab, TU Dresden)

A new technical paper titled “Nitride Ferroelectric Domain Wall Memory for Next-Generation Computing” was published by researchers at Kiel University, Fraunhofer Institute for Silicon Technology (ISIT ...
EDN

Researchers shrink ferroelectric memory stacks

Researchers in Japan have developed ultrathin ferroelectric capacitors that maintain strong polarization at a stack thickness of just 30 nm, including top and bottom electrodes. Using scandium-doped ...